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Paper is the ideal substrate for the development of flexible andenvironmentally sustainable ubiquitous electronic systems, which, combined withtwo-dimensional materials, could be exploited in many Internet-of-Thingsapplications, ranging from wearable electronics to smart packaging. Here wereport high-performance MoS2 field-effect transistors on paper fabricated witha channel-array approach, combining the advantages of two large-areatechniques: chemical vapor deposition and inkjet-printing.The first allows thepre-deposition of a pattern of MoS2; the second, the printing of dielectriclayers, contacts, and connections to complete transistors and circuitsfabrication. Average ION/IOFF of 8 x 10^3 (up to 5 x 10^4) and mobility of 5.5cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integratedcircuits of digital and analog building blocks, such as logic gates and currentmirrors, are demonstrated, highlighting the potential of this approach forubiquitous electronics on paper.

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper