English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Quantum technology relies on proper hardware, enabling coherent quantum statecontrol as well as efficient quantum state readout. In this regard,wide-bandgap semiconductors are an emerging material platform with scalablewafer fabrication methods, hosting several promising spin-active point defects.Conventional readout protocols for such defect spins rely on fluorescencedetection and are limited by a low photon collection efficiency. Here, wedemonstrate a photo-electrical detection technique for electron spins ofsilicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further,we show coherent spin state control, proving that this electrical readouttechnique enables detection of coherent spin motion. Our readout works atambient conditions, while other electrical readout approaches are often limitedto low temperatures or high magnetic fields. Considering the excellent maturityof SiC electronics with the outstanding coherence properties of SiC defects theapproach presented here holds promises for scalability of future SiC quantumdevices.

Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions