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Van der Waals materials offer a wide range of atomic layers with uniqueproperties that can be easily combined to engineer novel electronic andphotonic devices. A missing ingredient of the van der Waals platform is atwo-dimensional crystal with naturally occurring out-of-plane luminescentdipole orientation. Here we measure the far-field photoluminescence intensitydistribution of bulk InSe and two-dimensional InSe, WSe$_2$ and MoSe$_2$. Wedemonstrate, with the support of ab-initio calculations, that layered InSeflakes sustain luminescent excitons with an intrinsic out-of-plane orientation,in contrast with the in-plane orientation of dipoles we find in two-dimensionalWSe$_2$ and MoSe$_2$ at room-temperature. These results, combined with the hightunability of the optical response and outstanding transport properties,position layered InSe as a promising semiconductor for novel optoelectronicdevices, in particular for hybrid integrated photonic chips which exploit theout-of-plane dipole orientation.

Out-of-plane orientation of luminescent excitons in atomically thin indium selenide flakes