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Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS 2 ) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W −1  and detectivity over 10 13  Jones while keeping a fast response speed within 20 μs. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors.

Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization