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Voltage control of ferromagnetism on the nanometer scale is highly appealingfor the development of novel electronic devices. Here a key challenge is toimplement and combine low power consumption, high operation speed, reliablereversibility and compatibility with semiconductor technology. Hybridstructures based on the assembly of ferromagnetic and semiconducting buildingblocks are attractive candidates in that respect as such systems bring togetherthe properties of the isolated constituents: They are expected to show magneticorder as a ferromagnet and to be electrically tunable as a semiconductor. Herewe demonstrate the electrical control of the exchange coupling in a hybridconsisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well,separated by a thin non-magnetic (Cd,Mg)Te barrier. The effective magneticfield of the exchange interaction reaches up to 2.5 Tesla and can be turned onand off by application of 1 V bias across the heterostructure. The mechanism ofthis electric field control is essentially different from the conventionalconcept, in which wavefunctions are spatially redistributed to vary theexchange interaction, requiring high field strengths. Here we address insteadcontrol of the novel exchange mechanism that is mediated by ellipticallypolarized phonons emitted from the ferromagnet, i.e. the phononic ac Starkeffect. An essential parameter of this coupling is the splitting between heavyand light hole states in the quantum well which can be varied by the electricfield induced band bending. Thereby the splitting can be tuned with respect tothe magnon-phonon resonance energy in the ferromagnet, leading to maximumcoupling for flat band conditions. Our results demonstrate the feasibility ofelectrically controlled exchange coupling in hybrid semiconductornanostructures at quite moderate electric field strengths.

Voltage control of the long-range p-d exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure