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The great possibilities for strain engineering in core/shell nanowires havebeen explored as an alternative route to tailor the properties of binary III-Vsemiconductors without changing their chemical composition. In particular, wedemonstrate that the GaAs core in GaAs/In(x)Ga(1-x)As or GaAs/In(x)Al(1-x)Ascore/shell nanowires can sustain unusually large misfit strains that would havebeen impossible in conventional thin-film heterostructures. The built-in strainin the core can be regulated via the composition and the thickness of theshell. Thick enough shells become almost strain-free, whereas the thin coreundergoes a predominantly-hydrostatic tensile strain, which causes thereduction of the GaAs band gap energy. For the highest strain of 7 % in thiswork (obtained for x=0.54), a remarkable reduction of the band gap by 40 % wasachieved in agreement with theoretical calculations. Such strong modulation ofits electronic properties renders GaAs suitable for near-infrarednano-photonics and presumably high electron mobility nano-transistors.

Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires