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The intriguing physics of carrier-carrier interactions, which likewise affectthe operation of light emitting devices, stimulate the research onsemiconductor structures at high densities of excited carriers, a limitreachable at large pumping rates or in systems with long-lived electron-holepairs. By electrically injecting carriers into WSe$_2$/MoS$_2$ type-IIheterostructures which are indirect in real and k-space, we establish a largepopulation of typical optically silent interlayer excitons. Here, we revealtheir emission spectra and show that the emission energy is tunable by anapplied electric field. When the population is further increased by suppressingthe radiative recombination rate with the introduction of an hBN spacer betweenWSe$_2$ and MoS$_2$, Auger-type and exciton-exciton annihilation processesbecome important. These processes are traced by the observation of anup-converted emission demonstrating that excitons gaining energy innon-radiative Auger processes can be recovered and recombine radiatively.

Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures