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Antiferromagnets have been generating intense interest in the spintronicscommunity, owing to their intrinsic appealing properties like zero stray fieldand ultrafast spin dynamics. While the control of antiferromagnetic (AFM)orders has been realized by various means, applicably appreciatedfunctionalities on the readout side of AFM-based devices are urgently desired.Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) asgiant as ~ 160% in a simple resistor structure made of AFM Sr2IrO4 withoutauxiliary reference layer. The underlying mechanism for the giant AMR is anindispensable combination of atomic scale giant-MR-like effect andmagnetocrystalline anisotropy energy, which was not accessed earlier.Furthermore, we demonstrate the bistable nonvolatile memory states that can beswitched in-situ without the inconvenient heat-assisted procedure, and robustlypreserved even at zero magnetic field, due to the modified interlayer couplingby 1% Ga-doping in Sr2IrO4. These findings represent a straightforward steptoward the AFM spintronic devices.

Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4