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Intrinsic charge trap capacitive non-volatile flash memories take asignificant share of the semiconductor electronics market today. It is achallenge to create intrinsic traps in the dielectric layer without hightemperature processing steps. While low temperature processed memory devicesfabricated from polymers have been demonstrated as an alternative, theirperformance degrade rapidly after a few cycles of operation. Moreoverconventional memory devices need the support of tunneling and blocking layerssince the memory dielectric or polymer is incapable of preventing memoryleakage. The main issue in designing a memory device is to optimize the leakagecurrent and intrinsic trap density simultaneously. Here we report a tunableflash memory device without tunneling and blocking layer by combining thediscovery of high intrinsic charge traps ($>$10$^{12}$ cm$^{-2}$) together withlow leakage current($<$10$^{-7}$ A.cm$^{-2}$) in solution derived, inorganic,spin$-$coated dielectric films which were heated at 200$^\circ$C or below. Inaddition, the memory storage is tuned systematically upto 96% by controllingthe trap density with increasing heating temperature.

Low temperature (< 200{\deg}C) solution processed tunable flash memory device without tunneling and blocking layer