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Tetradymite-structured chalcogenides such as bismuth telluride Bi_{2}Te_{3}are of significant interest for thermoelectric energy conversion and astopological insulators. Dislocations play a critical role during synthesis andprocessing of such materials and can strongly affect their functionalproperties. The dislocations between quintuple layers present special interestsince their core structure is controlled by the van der Waals interactionsbetween the layers. In this work, using atomic-resolution electron microscopy,we resolve the basal dislocation core structure in Bi_{2}Te_{3}, quantifyingthe disregistry of the atomic planes across the core. We show that, despite theexistence of a stable stacking fault in the basal plane gamma surface, thedislocation core spreading is mainly due to the weak bonding between thelayers, which leads to a small energy penalty for layer sliding parallel to thevan der Waals gap. Calculations within a semidiscrete variationalPeierls-Nabarro model informed by first-principles calculations support ourexperimental findings.

Unraveling the dislocation core structure at a van der Waals gap in bismuth telluride