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The spin states of electrons confined in semiconductor quantum dots form apromising platform for quantum computation. Recent studies of silicon CMOSqubits have shown coherent manipulation of electron spin states with extremelyhigh fidelity. However, manipulation of single electron spins requires largeoscillatory magnetic fields to be generated on-chip, making it difficult toaddress individual qubits when scaling up to multi-qubit devices. Thespin-orbit interaction allows spin states to be controlled with electricfields, which act locally and are easier to generate. While the spin-orbitinteraction is weak for electrons in silicon, valence band holes have aninherently strong spin-orbit interaction. However, creating silicon quantumdots in which a single hole can be localised, in an architecture that issuitable for scale-up to a large number of qubits, is a challenge. Here wereport a silicon quantum dot, with an integrated charge sensor, that can beoperated down to the last hole. We map the spin states and orbital structure ofthe first six holes, and show they follow the Fock-Darwin spectrum. We alsofind that hole-hole interactions are extremely strong, reducing the two-holesinglet-triplet splitting by 90% compared to the single particle level spacingof 3.5 meV. These results provide a route to single hole spin quantum bits in aplanar silicon CMOS architecture.

Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot