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The optical selection rules in epitaxial quantum dots are strongly influencedby the orientation of their natural quantization axis, which is usuallyparallel to the growth direction. This configuration is well suited forvertically emitting devices, but not for planar photonic circuits because ofthe poorly controlled orientation of the transition dipoles in the growthplane. Here we show that the quantization axis of gallium arsenide dots can beflipped into the growth plane via moderate in plane uniaxial stress. By usingpiezoelectric strain actuators featuring strain-amplification we study theevolution of the selection rules and excitonic fine-structure in a regime, inwhich quantum confinement can be regarded as a perturbation compared to strainin determining the symmetry properties of the system. The experimental andcomputational results suggest that uniaxial stress, may be the right tool toobtain quantum light sources with ideally oriented transition dipoles andenhanced oscillator strengths for integrated quantum photonics.

Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics