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Two-dimensional (2D) topological insulators (TIs) are promising platforms forlow-dissipation spintronic devices based on the quantum spin Hall (QSH) effect,but experimental realization of such systems with a large band gap suitable forroom-temperature applications has proven difficult. Here, we report thesuccessful growth on bilayer graphene of a quasi-freestanding WSe$_2$ singlelayer with the 1T' structure that does not exist in the bulk form of WSe$_2$.Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelingmicroscopy/spectroscopy (STM/STS), we observed a gap of 129 meV in the 1T'layer and an in-gap edge state located near the layer boundary. The system's 2DTI characters are confirmed by first-principles calculations. The observed gapdiminishes with doping by Rb adsorption, ultimately leading to aninsulator-semimetal transition. The discovery of this large-gap 2D TI with atunable band gap opens up opportunities for developing advanced nanoscalesystems and quantum devices.

Quantum-spin-Hall insulator with a large gap: single-layer 1T' WSe$_2$