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Transition metal dichalcogenides (TMDs) have valley degree of freedom, whichfeatures optical selection rule and spin-valley locking, making them promisingfor valleytronics devices and quantum computation. For either application, along valley polarization lifetime is crucial. Previous results showed that itis around picosecond in monolayer excitons, nanosecond for electrons, holes orlocal excitons and tens of nanosecond for interlayer excitons. Here we showthat dark excitons in 2D heterostructures provide a microsecond valleypolarization memory thanks to the magnetic field induced suppression of valleymixing. The lifetime of the dark excitons shows magnetic field and temperaturedependence which is consistent with the theoretical prediction. The long darkexciton lifetime and valley polarization lifetime in 2D heterostructures makethem promising for long-distance exciton transport and macroscopic quantumstate generations.

Microsecond dark-exciton valley polarization memory in 2D heterostructures