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In weakly spin-orbit coupled materials, the spin-selective nature ofrecombination can give rise to large magnetic-field effects, for example onelectro-luminescence from molecular semiconductors. While silicon has weakspin-orbit coupling, observing spin-dependent recombination throughmagneto-electroluminescence is challenging due to the inefficiency of emissiondue to silicon's indirect band-gap, and to the difficulty in separatingspin-dependent phenomena from classical magneto-resistance effects. Here weovercome these challenges to measure magneto-electroluminescence in siliconlight-emitting diodes fabricated via gas immersion laser doping. These devicesallow us to achieve efficient emission while retaining a well-defined geometrythus suppressing classical magnetoresistance effects to a few percent. We findthat electroluminescence can be enhanced by up to 300\% near room temperaturein a seven Tesla magnetic field showing that the control of the spin degree offreedom can have a strong impact on the efficiency of silicon LEDs.

Room temperature magneto-optic effect in silicon light-emitting diodes