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A large spin-dependent and electric field-tunable magnetoresistance of atwo-dimensional electron system (2DES) is a key ingredient for the realizationof many novel concepts for spin-based electronic devices. The lowmagnetoresistance observed during the last decades in devices with lateralsemiconducting (SC) transport channels between ferromagnetic (FM) source (S)and drain (D) contacts has been the main obstacle for realizing spin fieldeffect transistor proposals. Here, we show both, a large two terminalmagnetoresistance in lateral 2DES-based spin valve geometry, with up to 80%resistance change, and tunability of the magnetoresistance by an electric gate.The large magnetoresistance is due to finite electric field effects at theFM/SC interface, which boost spin-to-charge conversion. The gating scheme weuse is based on switching between uni- and bi-directional spin diffusion,without resorting to the spin-orbit coupling.

Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device