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Atomically-thin 2D semiconducting materials integrated into van der Waalsheterostructures have enabled architectures that hold great promise for nextgeneration nanoelectronics. However, challenges still remain to enable theirfull acceptance as compliant materials for integration in logic devices. Twokey-components to master are the barriers at metal/semiconductor interfaces andthe mobility of the semiconducting channel, which endow the building-blocks of${pn}$ diode and field effect transistor. Here, we have devised a revertedstacking technique to intercalate a wrinkle-free h-BN tunnel layer betweenMoS$_{2}$ channel and contacting electrodes. Vertical tunnelling of electronstherefore makes it possible to suppress the Schottky barriers and Fermi levelpinning, leading to homogeneous gate-control of the channel chemical potentialacross the bandgap edges. The observed unprecedented features of ambipolar${pn}$ to ${np}$ diode, which can be reversibly gate tuned, paves the way forfuture logic applications and high performance switches based on atomicallythin semiconducting channel.

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS$_{2}$ transistor