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Bottom-up synthesized GNRs and GNR heterostructures have promising electronicproperties for high performance field effect transistors (FETs) and ultra-lowpower devices such as tunnelling FETs. However, the short length and wide bandgap of these GNRs have prevented the fabrication of devices with the desiredperformance and switching behaviour. Here, by fabricating short channel (Lch~20 nm) devices with a thin, high-k gate dielectric and a 9-atom wide (0.95 nm)armchair GNR as the channel material, we demonstrate FETs with high on-current(Ion >1 uA at Vd = -1 V) and high Ion/Ioff ~10^5 at room temperature. We findthat the performance of these devices is limited by tunnelling through theSchottky barrier (SB) at the contacts and we observe an increase in thetransparency of the barrier by increasing the gate field near the contacts. Ourresults thus demonstrate successful fabrication of high performanceshort-channel FETs with bottom-up synthesized armchair GNRs.

Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons