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Two-dimensional transition metal dichalcogenide-based photodetectors have demonstrated potential for the next generation of 2-dimensional optoelectronics. However, to date, their sensitivity has not been superior to that of other technologies. Here we report an ultrasensitive two-dimensional photodetector employing an in-plane phototransistor with an out-of-plane vertical MoS 2  p–n junction as a sensitizing scheme. The vertical built-in field is introduced for the first time in the transport channel of MoS 2  phototransistors by facile chemical surface doping, which separates the photo-excited carriers efficiently and produces a photoconductive gain of &gt;10 5  electrons per photon, external quantum efficiency greater than 10%, responsivity of 7 × 10 4  A W −1 , and a time response on the order of tens of ms. This taken together with a very low noise power density yields a record sensitivity with specific detectivity    \documentclass[12pt]{minimal} 				\usepackage{amsmath} 				\usepackage{wasysym}  				\usepackage{amsfonts}  				\usepackage{amssymb}  				\usepackage{amsbsy} 				\usepackage{mathrsfs} 				\usepackage{upgreek} 				\setlength{\oddsidemargin}{-69pt} 				\begin{document}$$D^*$$\end{document}D    *of 3.5 × 10 14  Jones in the visible and a broadband response up to 1000 nm.

Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction