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The most effective way to enhance the dissipation-free supercurrent inpresence of magnetic field for type II superconductors is the introduction ofdefects that acts as artificial pinning centres (APCs) for the vortices. Forinstance, the in-field critical current density of doped BaFe2As2 (Ba122), oneof the most technologically important Fe-based superconductors, has beenimproved over the last decade by APCs created by ion-irradiation. The techniqueof ion-irradiation has been commonly implemented to determine the ultimatesuperconducting properties. However, this method is rather complicated andexpensive. Here, we report on a surprisingly high critical current density andstrong pinning efficiency close to the crystallographic c-axis for a K-dopedBa122 epitaxial thin film without APCs, achieving performance comparable toion-irradiated K-doped Ba122 single crystals. Microstructural analysis revealsthat the film is composed of columnar grains having width around 30-60 nm. Thegrains are rotated around the b- (or a-) axis by 1.5 degree and around thec-axis by -1 degree, resulting in the formation of low-angle grain boundarynetworks. This study demonstrates that the upper limit of in-field propertiesreached in ion-irradiated K-doped Ba122 is achievable by grain boundaryengineering, which is a simple and industrially scalable manner.

Approaching the ultimate superconducting properties of (Ba,K)Fe2As2 by naturally formed low-angle grain boundary networks