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Antiferromagnetic-paraelectric SrMnO 3  (SMO) has aroused interest because of the theoretical strong coupling between the ferroelectric and ferromagnetic states with increasing epitaxial strain. In strained SMO films, the   polarized state and polar distortions have been observed, although high leakage currents and air degradation have limited their experimental verification. We herein provide a conclusive demonstration of room-temperature ferroelectricity and a high dielectric constant ( ε   r   = 138.1) in tensile-strained SMO by securing samples with insulating properties and clean surfaces using selective oxygen annealing. Furthermore, a paraelectricity and low dielectric constant ( ε   r   = 6.7) in the strain-relaxed SMO film have been identified as properties of the bulk SMO, which directly proves that the ferroelectricity of the tensile-strained SMO film is due to strain-induced polarization. We believe that these findings not only provide a cornerstone for exploring the physical properties of multiferroic SMO but also inspire new directions for single-phase multiferroics.

Experimental realization of strain-induced room-temperature ferroelectricity in SrMnO3 films via selective oxygen annealing