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Zero-index (ZI) materials are synthetic optical materials with vanishingeffective permittivity and/or permeability at a given design frequency.Recently, it has been shown that the permeability of a zero-index host materialcan be deterministically tuned by adding photonic dopants. Here, we applymetal-induced crystallization (MIC) in quasi-random metal-semiconductorcomposites to fabricate large-area zero-index materials. Using Ag-Si as a modelsystems, we demonstrate that the localized crystallization of the semiconductorat the metal/semiconductor interface can be used as design parameter to controllight interaction in such a disordered system. The induced crystallizationgenerates new zero-index states corresponding to a hybridized plasmonic modeemerging from selective coupling of light to the \r{a}ngstr\"om-sizedcrystalline shell of the semiconductor. Photonic doping can be used to enhancethe transmission in these disordered metamaterials as is shown by simulation.Our results break ground for novel large-area zero-index materials for waferscale applications and beyond.

Disordered Zero-Index Metamaterials Based On Metal Induced Crystallization