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Robust laser sources are a fundamental building block for contemporaryinformation technologies. Originating from condensed-matter physics, theconcept of topology has recently entered the realm of optics, offeringfundamentally new design principles for lasers with enhanced robustness. Inanalogy to the well-known Majorana fermions in topological superconductors,Dirac-vortex states have recently been investigated in passive photonic systemsand are now considered as a promising candidate for single-mode large-arealasers. Here, we experimentally realize the first Dirac-vortex topologicallasers in InAs/InGaAs quantum-dot materials monolithically grown on a siliconsubstrate. We observe room-temperature continuous-wave single-mode linearlypolarized vertical laser emission at a telecom wavelength. Most importantly, weconfirm that the wavelength of the Dirac-vortex laser is topologically robustagainst variations in the cavity size, and its free spectral range defies theuniversal inverse scaling law with the cavity size. These lasers will play animportant role in CMOS-compatible photonic and optoelectronic systems on achip.

Room-temperature continuous-wave Dirac-vortex topological lasers on silicon