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Defect density is one of the most significant characteristics of perovskite single crystals (PSCs) that determines their optical and electrical properties, but few strategies are available to tune this property. Here, we demonstrate that voltage regulation is an efficient method to tune defect density, as well as the optical and electrical properties of PSCs. A three-step carrier transport model of MAPbBr 3  PSCs is proposed to explore the defect regulation mechanism and carrier transport dynamics via an applied bias. Dynamic and steady-state photoluminescence measurements subsequently show that the surface defect density, average carrier lifetime, and photoluminescence intensity can be efficiently tuned by the applied bias. In particular, when the regulation voltage is 20 V (electrical poling intensity is 0.167 V μm −1 ), the surface defect density of MAPbBr 3  PSCs is reduced by 24.27%, the carrier lifetime is prolonged by 32.04%, and the PL intensity is increased by 112.96%. Furthermore, a voltage-regulated MAPbBr 3  PSC memristor device shows an adjustable multiresistance, weak ion migration effect and greatly enhanced device stability. Voltage regulation is a promising engineering technique for developing advanced perovskite optoelectronic devices.

Modulating the optical and electrical properties of MAPbBr3 single crystals via voltage regulation engineering and application in memristors