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Two-dimensional materials offer new opportunities for both fundamentalscience and technological applications, by exploiting the electron spin. Whilegraphene is very promising for spin communication due to its extraordinaryelectron mobility, the lack of a band gap restricts its prospects forsemiconducting spin devices such as spin diodes and bipolar spin transistors.The recent emergence of 2D semiconductors could help overcome this basicchallenge. In this letter we report the first important step towards making 2Dsemiconductor spin devices. We have fabricated a spin valve based on ultra-thin(5 nm) semiconducting black phosphorus (bP), and established fundamental spinproperties of this spin channel material which supports all electrical spininjection, transport, precession and detection up to room temperature (RT).Inserting a few layers of boron nitride between the ferromagnetic electrodesand bP alleviates the notorious conductivity mismatch problem and allowsefficient electrical spin injection into an n-type bP. In the non-local spinvalve geometry we measure Hanle spin precession and observe spin relaxationtimes as high as 4 ns, with spin relaxation lengths exceeding 6 um. Ourexperimental results are in a very good agreement with first-principlescalculations and demonstrate that Elliott-Yafet spin relaxation mechanism isdominant. We also demonstrate that spin transport in ultra-thin bP dependsstrongly on the charge carrier concentration, and can be manipulated by theelectric field effect.

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes