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Among the recently discovered iron-based superconductors, ultrathin films ofFeSe grown on SrTiO3 substrates have uniquely evolved into a highsuperconducting-transition-temperature (TC) material. The mechanisms for thehigh-TC superconductivity are ongoing debate mainly with the superconductinggap characterized with in-situ analysis for FeSe films grown by bottom-upmolecular-beam epitaxy. Here, we demonstrate the alternative access toinvestigate the high-TC superconductivity in ultrathin FeSe with top-downelectrochemical etching technique in three-terminal transistor configuration.In addition to the high-TC FeSe on SrTiO3, the electrochemically etchedultrathin FeSe transistor on MgO also exhibits superconductivity around 40 K,implying that the application of electric-field effectively contributes to thehigh-TC superconductivity in ultrathin FeSe regardless of substrate material.Moreover, the observable critical thickness for the high-TC superconductivityis expanded up to 10-unit-cells under applying electric-field and theinsulator-superconductor transition is electrostatically controlled. Thepresent demonstration implies that the electric-field effect on both conductionand valence bands plays a crucial role for inducing high-TC superconductivityin FeSe.

Electric-field-induced superconductivity in electrochemically-etched ultrathin FeSe films on SrTiO3 and MgO