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Conventional computer electronics creates a dichotomy between how informationis processed and how it is stored. Silicon chips process information bycontrolling the flow of charge through a network of logic gates. Thisinformation is then stored, most commonly, by encoding it in the orientation ofmagnetic domains of a computer hard disk. The key obstacle to a more intimateintegration of magnetic materials into devices and circuit processinginformation is a lack of efficient means to control their magnetization. Thisis usually achieved with an external magnetic field or by the injection ofspin-polarized currents. The latter can be significantly enhanced in materialswhose ferromagnetic properties are mediated by charge carriers. Among thesematerials, conductors lacking spatial inversion symmetry couple charge currentsto spin by intrinsic spin-orbit (SO) interactions, inducing nonequilibrium spinpolarization tunable by local electric fields. Here we show that magnetizationof a ferromagnet can be reversibly manipulated by the SO-induced polarizationof carrier spins generated by unpolarized currents. Specifically, wedemonstrate domain rotation and hysteretic switching of magnetization betweentwo orthogonal easy axes in a model ferromagnetic semiconductor.

Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field