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Spin-momentum transfer between a spin-polarized current and a ferromagneticlayer can induce steady-state magnetization precession, and has recently beenproposed as a working principle for ubiquitous radio-frequency devices forradar and telecommunication applications. However, to-date, the development ofindustrially attractive prototypes has been hampered by the inability toidentify systems which can provide enough power. Here, we demonstrate thatmicrowave signals with device-compatible output power levels can be generatedfrom a single magnetic tunnel junction with a lateral size of 100 nm, sevenorders of magnitude smaller than conventional radio-frequency oscillators. Wefind that in MgO magnetic tunnel junctions the perpendicular torque induced bythe spin-polarized current on the local magnetization can reach 25% of thein-plane spin-torque term, while exhibiting a different bias-dependence. Bothfindings contrast with the results obtained on all-metallic structures -previously investigated -, reflecting the fundamentally different transportmechanisms in the two types of structures.

Bias-driven large power microwave emission from MgO-based tunnel magnetoresistance devices