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Fully exploiting the silicon photonics platform requires a fundamentally newapproach to realize high-performance laser sources that can be integrateddirectly using wafer-scale fabrication methods. Direct band gap III-Vsemiconductors allow efficient light generation but the large mismatch inlattice constant, thermal expansion and crystal polarity makes their epitaxialgrowth directly on silicon extremely complex. Here, using a selective areagrowth technique in confined regions, we surpass this fundamental limit anddemonstrate an optically pumped InP-based distributed feedback (DFB) laserarray grown on (001)-Silicon operating at room temperature and suitable forwavelength-division-multiplexing applications. The novel epitaxial technologysuppresses threading dislocations and anti-phase boundaries to a less than 20nmthick layer not affecting the device performance. Using an in-plane lasercavity defined by standard top-down lithographic patterning together with ahigh yield and high uniformity provides scalability and a straightforward pathtowards cost-effective co-integration with photonic circuits and III-V FINFETlogic.

Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon