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Exploiting the valley degree of freedom to store and manipulate informationprovides a novel paradigm for future electronics. A monolayer transition metaldichalcogenide (TMDC) with broken inversion symmetry possesses two degenerateyet inequivalent valleys, offering unique opportunities for valley controlthrough helicity of light. Lifting the valley degeneracy by Zeeman splittinghas been demonstrated recently, which may enable valley control by a magneticfield. However, the realized valley splitting is modest, (~ 0.2 meV/T). Here weshow greatly enhanced valley spitting in monolayer WSe2, utilizing theinterfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate. Avalley splitting of 2.5 meV is demonstrated at 1 T by magneto-reflectancemeasurements. Moreover, the splitting follows the magnetization of EuS, ahallmark of the MEF. Utilizing MEF of a magnetic insulator can induce magneticorder, and valley and spin polarization in TMDCs, which may enable valleytronicand quantum computing applications.

Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field