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The interplay between magnetism and topology, as exemplified in the magneticskyrmion systems, has emerged as a rich playground for finding novel quantumphenomena and applications in future information technology. Magnetictopological insulators (TI) have attracted much recent attention, especiallyafter the experimental realization of quantum anomalous Hall effect. Futureapplications of magnetic TI hinge on the accurate manipulation of magnetism andtopology by external perturbations, preferably with a gate electric field. Inthis work, we investigate the magneto transport properties of Cr dopedBi2(SexTe1-x)3 TI across the topological quantum critical point (QCP). We findthat the external gate voltage has negligible effect on the magnetic order forsamples far away from the topological QCP. But for the sample near the QCP, weobserve a ferromagnetic (FM) to paramagnetic (PM) phase transition driven bythe gate electric field. Theoretical calculations show that a perpendicularelectric field causes a shift of electronic energy levels due to the Starkeffect, which induces a topological quantum phase transition and consequently amagnetic phase transition. The in situ electrical control of the topologicaland magnetic properties of TI shed important new lights on future topologicalelectronic or spintronic device applications.

Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect