English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Light absorption in graphene causes a large change in electron temperature,due to low electronic heat capacity and weak electron phonon coupling [1-3],making it very attractive as a hot-electron bolometer material. Unfortunately,the weak variation of electrical resistance with temperature has substantiallylimited the responsivity of graphene bolometers. Here we show that quantum dotsof epitaxial graphene on SiC exhibit an extraordinarily high variation ofresistance with temperature due to quantum confinement, higher than 430 Mohm/Kat 2.5 K, leading to responsivities for absorbed THz power above 10^10 V/W.This is five orders of magnitude higher than other types of graphene hotelectron bolometers. The high responsivity combined with an extremely lownoise-equivalent power, about 0.2 fW/Hz^0.5 at 2.5K, place the performance ofgraphene quantum dot bolometers well above commercial cooled bolometers.Additionally, these quantum dot bolometers have the potential for superiorperformance for operation above 77K.

Epitaxial graphene quantum dots for high-performance THz bolometers