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The ability to tune material properties using gate electric field is at theheart of modern electronic technology. It is also a driving force behind recentadvances in two-dimensional systems, such as gate-electric-field inducedsuperconductivity and metal-insulator transition. Here we describe an ionicfield-effect transistor (termed "iFET"), which uses gate-controlled lithium ionintercalation to modulate the material property of layered atomic crystal1T-TaS$_2$. The extreme charge doping induced by the tunable ion intercalationalters the energetics of various charge-ordered states in 1T-TaS$_2$, andproduces a series of phase transitions in thin-flake samples with reduceddimensionality. We find that the charge-density-wave states in 1T-TaS$_2$ arethree-dimensional in nature, and completely collapse in the two-dimensionallimit defined by their critical thicknesses. Meanwhile the ionic gating inducesmultiple phase transitions from Mott-insulator to metal in 1T-TaS$_2$ thinflakes at low temperatures, with 5 orders of magnitude modulation in theirresistance. Superconductivity emerges in a textured charge-density-wave stateinduced by ionic gating. Our method of gate-controlled intercalation of 2Datomic crystals in the bulk limit opens up new possibilities in searching fornovel states of matter in the extreme charge-carrier-concentration limit.

Gate-tunable Phase Transitions in 1T-TaS$_2$