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Topological insulators represent a new state of quantum matter attractive toboth fundamental physics and technological applications such as spintronics andquantum information processing. In a topological insulator, the bulk energy gapis traversed by spin-momentum locked surface states forming an odd number ofsurface bands that possesses unique electronic properties. However, transportmeasurements have often been dominated by residual bulk carriers from crystaldefects or environmental doping which mask the topological surfacecontribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topologicalinsulator system to manipulate bulk conductivity by varying the Bi/Sbcomposition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed astopological insulators for the entire composition range by angle resolvedphotoemission spectroscopy (ARPES) measurements and ab initio calculations.Additionally, we observe a clear ambipolar gating effect similar to thatobserved in graphene using nanoplates of (BixSb1-x)2Te3 infield-effect-transistor (FET) devices. The manipulation of carrier type andconcentration in topological insulator nanostructures demonstrated in thisstudy paves the way for implementation of topological insulators innanoelectronics and spintronics.

Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3