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Spatial phase inhomogeneity at the nano- to microscale is widely observed instrongly-correlated electron materials. The underlying mechanism andpossibility of artificially controlling the phase inhomogeneity are still openquestions of critical importance for both the phase transition physics anddevice applications. Lattice strain has been shown to cause the coexistence ofmetallic and insulating phases in the Mott insulator VO2. By continuouslytuning strain over a wide range in single-crystal VO2 micro- and nanobeams,here we demonstrate the nucleation and manipulation of one-dimensionallyordered metal-insulator domain arrays along the beams. Mott transition isachieved in these beams at room temperature by active control of strain. Theability to engineer phase inhomogeneity with strain lends insight intocorrelated electron materials in general, and opens opportunities for designingand controlling the phase inhomogeneity of correlated electron materials formicro- and nanoscale device applications.

Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal VO2 beams