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Coupled electron spins in semiconductor double quantum dots hold promise asthe basis for solid-state qubits. To date, most experiments have used III-Vmaterials, in which coherence is limited by hyperfine interactions. Ge/Siheterostructure nanowires seem ideally suited to overcome this limitation: thepredominance of spin-zero nuclei suppresses the hyperfine interaction andchemical synthesis creates a clean and defect-free system with highlycontrollable properties. Here we present a top gate-defined double quantum dotbased on Ge/Si heterostructure nanowires with fully tunable coupling betweenthe dots and to the leads. We also demonstrate a novel approach to chargesensing in a one-dimensional nanostructure by capacitively coupling the doubledot to a single dot on an adjacent nanowire. The double quantum dot andintegrated charge sensor serve as an essential building block required to forma solid-state spin qubit free of nuclear spin.

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires