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Electrical detection of spins is an essential tool in understanding thedynamics of spins in semiconductor devices, providing valuable insights forapplications ranging from optoelectronics and spintronics to quantuminformation processing. For electron spins bound to shallow donors in silicon,bulk electrically-detected magnetic resonance has relied on coupling to spinreadout partners such as paramagnetic defects or conduction electrons whichfundamentally limits spin coherence times. Here we demonstrate electricaldetection of phosphorus donor electron spin resonance by transport through asilicon device, using optically-driven donor-bound exciton transitions. We usethis method to measure electron spin Rabi oscillations, and, by avoiding use ofan ancillary spin for readout, we are able to obtain long intrinsic electronspin coherence times, limited only by the donor concentration. We go on toexperimentally address critical issues for adopting this scheme for single spinmeasurement in silicon nanodevices, including the effects of strain, electricfields, and non-resonant excitation. This lays the foundations for realising aversatile readout method for single spin readout with relaxed magnetic fieldand temperature requirements compared with spin-dependent tunneling.

Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon