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Three-dimensional topological crystalline insulators were recently predictedand observed in the SnTe class of IV-VI semiconductors, which host metallicsurface states protected by crystal symmetries. In this work, we study thinfilms of these materials and expose their potential for device applications. Wedemonstrate that thin films of SnTe and Pb(1-x)Sn(x)Se(Te) grown along the(001) direction are topologically nontrivial in a wide range of film thicknessand carry conducting spin-filtered edge states that are protected by the (001)mirror symmetry via a topological invariant. Application of an electric fieldperpendicular to the film will break the mirror symmetry and generate a bandgap in these edge states. This functionality motivates us to propose a noveltopological transistor device, in which charge and spin transport are maximallyentangled and simultaneously controlled by an electric field. The high on/offoperation speed and coupling of spin and charge in such a device may lead toelectronic and spintronic applications for topological crystalline insulators.

Spin-filtered Edge States with an Electrically Tunable Gap in a Two-Dimensional Topological Crystalline Insulator