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A prerequisite for exploiting spins for quantum data storage and processingis long spin coherence times. Phosphorus dopants in silicon (Si:P) have beenfavoured as hosts for such spins because of measured electron spin coherencetimes (T2) longer than any other electron spin in the solid state: 14 ms at 7K. Heavier impurities such as bismuth in silicon (Si:Bi) could be used inconjunction with Si:P for quantum information proposals that require twoseparately addressable spin species. However, the question of whether theincorporation of the much less soluble Bi into Si leads to defect species thatdestroy coherence has not been addressed. Here we show that schemes involvingSi:Bi are indeed feasible as the electron spin coherence time T2 exceeds 1 msat 10 K. We polarized the Si:Bi electrons and hyperpolarized the I=9/2 nuclearspin of 209Bi, manipulating both with pulsed magnetic resonance. The largernuclear spin means that a Si:Bi dopant provides a 20-dimensional Hilbert spacerather than the four dimensional Hilbert space of an I=1/2 Si:P dopant.

Initializing, manipulating and storing quantum information with bismuth dopants in silicon