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3D topological insulators are a new state of quantum matter which exhibitsboth a bulk band structure with an insulating energy gap as well as metallicspin-polarized Dirac fermion states when interfaced with a topologicallytrivial material. There have been various attempts to tune the Dirac point to adesired energetic position for exploring its unusual quantum properties. Herewe show a direct experimental proof by angle-resolved photoemission of therealization of a vertical topological p-n junction made of a heterostructure oftwo different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and$\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that thechemical potential is tunable by about 200 meV when decreasing the upper$\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers withoutapplying any external bias. These results make it realistic to observe thetopological exciton condensate and pave the way of exploring other exoticquantum phenomena in the near future.

Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures