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Understanding magnetoresistance, the change in electrical resistance upon anexternal magnetic field, at the atomic level is of great interest bothfundamentally and technologically. Graphene and other two-dimensional layeredmaterials provide an unprecedented opportunity to explore magnetoresistance atits nascent stage of structural formation. Here, we report an extremely largelocal magnetoresistance of ~ 2,000% at 400 K and a non-local magnetoresistanceof > 90,000% in 9 T at 300 K in few-layer graphene/boron-nitrideheterostructures. The local magnetoresistance is understood to arise from largedifferential transport parameters, such as the carrier mobility, across variouslayers of few-layer graphene upon a normal magnetic field, whereas thenon-local magnetoresistance is due to the magnetic field inducedEttingshausen-Nernst effect. Non-local magnetoresistance suggests thepossibility of a graphene based gate tunable thermal switch. In addition, ourresults demonstrate that graphene heterostructures may be promising formagnetic field sensing applications.

Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures