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Resonant tunnelling is a quantum mechanical process that has long beenattracting both scientific and technological attention owing to its intriguingunderlying physics and unique applications for high-speed electronics. Thematerials system exhibiting resonant tunnelling, however, has been largelylimited to the conventional semiconductors, partially due to their excellentcrystalline quality. Here we show that a deliberately designed transition metaloxide superlattice exhibits a resonant tunnelling behaviour with a clearnegative differential resistance. The tunnelling occurred through an atomicallythin, lanthanum {\delta}-doped SrTiO3 layer, and the negative differentialresistance was realized on top of the bipolar resistance switching typicallyobserved for perovskite oxide junctions. This combined process resulted in anextremely large resistance ratio (~10^5) between the high and low-resistancestates. The unprecedentedly large control found in atomically thin{\delta}-doped oxide superlattices can open a door to novel oxide-basedhigh-frequency logic devices.

Resonant tunneling in a quantum oxide superlattice