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The three-dimensional (3D) topological insulator (TI) is a novel state ofmatter as characterized by two-dimensional (2D) metallic Dirac states on itssurface. Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and theircombined/mixed compounds like Bi2Se2Te and (Bi1-xSbx)2Te3 are typical membersof 3D-TIs which have been intensively studied in forms of bulk single crystalsand thin films to verify the topological nature of the surface states. Here, wereport the realization of the Quantum Hall effect (QHE) on the surface Diracstates in (Bi1-xSbx)2Te3 films (x = 0.84 and 0.88). With electrostaticgate-tuning of the Fermi level in the bulk band gap under magnetic fields, thequantum Hall states with filling factor \nu = \pm 1 are resolved with quantizedHall resistance of Ryx = h/e2 and zero longitudinal resistance, owing to chiraledge modes at top/bottom surface Dirac states. Furthermore, the appearance of a\nu = 0 state (\sigma xy = 0) reflects a pseudo-spin Hall insulator state whenthe Fermi level is tuned in between the energy levels of the non-degenerate topand bottom surface Dirac points. The observation of the QHE in 3D TI films maypave a way toward TI-based electronics.

Quantum Hall Effect on Top and Bottom Surface States of Topological Insulator (Bi1-xSbx)2Te3 Films