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The direct growth of high-quality, large single-crystalline domains ofgraphene on a dielectric substrate is of vital importance for applications inelectronics and optoelectronics. Traditionally, graphene domains grown ondielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less,the main reason is the lack of a catalyst. Here we show that silane, serving asa gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min,thereby promoting graphene domains up to 20 um in size to be synthesized viachemical vapor deposition on hexagonal boron nitride. Hall measurements showthat the mobility of the sample reaches 20,000 cm2/Vs at room temperature,which is among the best for CVD-grown graphene. Combining the advantages ofboth catalytic CVD and the ultra-flat dielectric substrate, gaseouscatalyst-assisted CVD paves the way for synthesizing high-quality graphene fordevice applications while avoiding the transfer process.

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride