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Molybdenum disulfide is considered as one of the most promisingtwo-dimensional semiconductors for electronic and optoelectronic deviceapplications. So far, the charge transport in monolayer molybdenum disulfide isdominated by extrinsic factors such as charged impurities, structural defectsand traps, leading to much lower mobility than the intrinsic limit. Here, wedevelop a facile low-temperature thiol chemistry to repair the sulfur vacanciesand improve the interface, resulting in significant reduction of the chargedimpurities and traps. High mobility greater than 80cm2 V-1 s-1 is achieved inbackgated monolayer molybdenum disulfide field-effect transistors at roomtemperature. Furthermore, we develop a theoretical model to quantitativelyextract the key microscopic quantities that control the transistorperformances, including the density of charged impurities, short-range defectsand traps. Our combined experimental and theoretical study provides a clearpath towards intrinsic charge transport in two-dimensional dichalcogenides forfuture high-performance device applications.

Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering