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The electronic properties of correlated oxides are exceptionally sensitive to the orbital occupancy of electrons. Here we report an electron doping strategy via a chemical route, where interstitial dopants (for example, hydrogen) can be reversibly intercalated, realizing a sharp phase transition in a model correlated perovskite nickelate SmNiO3. The electron configuration of eg orbital of Ni(3+) t2g(6)eg(1) in SmNiO3 is modified by injecting and anchoring an extra electron, forming a strongly correlated Ni(2+) t2g(6)eg(2) structure leading to the emergence of a new insulating phase. A reversible resistivity modulation greater than eight orders of magnitude is demonstrated at room temperature. A solid-state room temperature non-volatile proton-gated phase-change transistor is demonstrated based on this principle, which may inform new materials design for correlated oxide devices. Electron doping-driven phase transition accompanied by large conductance changes and band gap modulation opens up new directions to explore emerging electronic and photonic devices with correlated oxide systems.

Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping