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Transition metal dichalcogenides have attracted much attention recently dueto their potential applications in spintronics and photonics as a result of theindirect to direct band gap transition and the emergence of the spin-valleycoupling phenomenon upon moving from the bulk to monolayer limit. Here, wereport high-resolution angle-resolved photoemission spectroscopy on MoSe2(molybdenum diselenide) single crystals and monolayer films of MoS2 grown onHighly Ordered Pyrolytic Graphite substrate. Our experimental results, for thefirst time, resolve the two distinct bands at the Brillouin zone corner of thebulk MoSe2, and provide evidence for the critically important spin-orbit splitbands of the monolayer MoS2. Moreover, by depositing potassium on cleavedsurfaces of these materials, the process through which quantum well states formon the surfaces of transition metal dichalcogenides is systematically imaged.We present a theoretical model to account for the observed spin-orbit splittingand the rich spectrum of the quantum well states observed in our experiments.Our findings taken together provide important insights into future applicationsof transition metal dichalcogenides in nanoelectronics, spintronics, andphotonics devices as they critically depend on the spin-orbit physics of thesematerials.

Observation of monolayer valence band spin-orbit effect and induced quantum well states (QWS) in MoX2