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Anisotropy refers to the property of a material exhibiting directionallydependent features. In this paper, we introduce black phosphorous (BP), themost stable allotrope of phosphorus in layered orthorhombic structure with abandgap of 0.3 eV in bulk, as a unique 2D material in which electrons, phononsand their interactions with photons behave in a highly anisotropic mannerwithin the plane of the layers. The unique anisotropic nature of BP thin filmsis revealed using angle-resolved Raman and infrared spectroscopies, togetherwith angle-resolved transport study. For 15 nm thick BP, we measure Hallmobility of 1000 and 600 cm^2/Vs for holes along the light (x) and heavy (y)effective mass directions, respectively, at 120 K. These BP thin films alsoexhibit large and anisotropic in-plane optical conductivity from 2 to 5micrometer wavelength. Field effect transistors using 4 to 30 layers of BP (2to 15 nm) as channel material exhibit an on-off current ratio exceeding 10^5, afield-effect mobility of 205 cm^2/Vs, and good saturation properties all atroom temperature, suggesting its promising future in high performance thin filmelectronics. By introducing narrow bandgap BP into the 2D material family, wefill the space between semi-metallic graphene and large bandgap TMDCs, wheregreat potentials for infrared optoelectronics lie. Most importantly, the uniqueanisotropic nature of this intriguing material creates unprecedentedpossibilities for the realization of conceptually new optoelectronic andelectronic devices in which angle-dependent physical properties are highlydesirable.

Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics