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Silicon quantum dots are a leading approach for solid-state quantum bits.However, developing this technology is complicated by the multi-valley natureof silicon. Here we observe transport of individual electrons in a siliconCMOS-based double quantum dot under electron spin resonance. An anticrossing ofthe driven dot energy levels is observed when the Zeeman and valley splittingscoincide. A detected anticrossing splitting of 60 MHz is interpreted as adirect measure of spin and valley mixing, facilitated by spin-orbit interactionin the presence of non-ideal interfaces. A lower bound of spin dephasing timeof 63 ns is extracted. We also describe a possible experimental evidence of anunconventional spin-valley blockade, despite the assumption of non-idealinterfaces. This understanding of silicon spin-valley physics should enablebetter control and read-out techniques for the spin qubits in an all CMOSsilicon approach.

Electron spin resonance and spin-valley physics in a silicon double quantum dot