English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Interest in many strongly spin-orbit coupled 5d-transition metal oxideinsulators stems from mapping their electronic structures to a J=1/2 Mottphase. One of the hopes is to establish their Mott parent states and explorethese systems' potential of realizing novel electronic states upon carrierdoping. However, once doped, little is understood regarding the role of theirreduced Coulomb interaction U relative to their strongly correlated 3d-electroncousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator,carriers remain localized within a nanoscale phase separated ground state. Apercolative metal-insulator transition occurs with interplay between localizedand itinerant regions, stabilizing an antiferromagnetic metallic phase beyondthe critical region. Our results demonstrate a surprising parallel betweendoped 5d- and 3d-electron Mott systems and suggest either through the neardegeneracy of nearby electronic phases or direct carrier localization that U isessential to the carrier response of this doped spin-orbit Mott insulator.

Carrier localization and electronic phase separation in a doped spin-orbit driven Mott phase in Sr3(Ir1-xRux)2O7